Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3

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Subtotal (1 pack of 5 units)*

Kr.98 27 

(exc. VAT)

Kr.122 84 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 19,654Kr. 98,27
50 - 245Kr. 18,488Kr. 92,44
250 - 495Kr. 16,702Kr. 83,51
500 - 1245Kr. 15,742Kr. 78,71
1250 +Kr. 14,734Kr. 73,67

*price indicative

Packaging Options:
RS Stock No.:
228-2899
Mfr. Part No.:
SiR450DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Power Dissipation Pd

48W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

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