Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3
- RS Stock No.:
- 228-2899
- Mfr. Part No.:
- SiR450DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr. 101,59
(exc. VAT)
Kr. 126,99
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Last RS stock
- Final 5 880 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 20,318 | Kr. 101,59 |
| 50 - 245 | Kr. 19,104 | Kr. 95,52 |
| 250 - 495 | Kr. 17,274 | Kr. 86,37 |
| 500 - 1245 | Kr. 16,244 | Kr. 81,22 |
| 1250 + | Kr. 15,238 | Kr. 76,19 |
*price indicative
- RS Stock No.:
- 228-2899
- Mfr. Part No.:
- SiR450DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 113A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 75.5nC | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 113A | ||
Maximum Drain Source Voltage Vds 45V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 75.5nC | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 45 V MOSFET.
100 % Rg and UIS tested
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