Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3

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Subtotal (1 pack of 5 units)*

Kr.72 07 

(exc. VAT)

Kr.90 09 

(inc. VAT)

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  • 5 995 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
5 - 45Kr. 14,414Kr. 72,07
50 - 120Kr. 12,95Kr. 64,75
125 - 245Kr. 10,822Kr. 54,11
250 - 495Kr. 10,068Kr. 50,34
500 +Kr. 6,636Kr. 33,18

*price indicative

Packaging Options:
RS Stock No.:
228-2887
Mfr. Part No.:
SiJ450DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

48W

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

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