Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual

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Subtotal (1 pack of 10 units)*

Kr.110 85 

(exc. VAT)

Kr.138 56 

(inc. VAT)

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Last RS stock
  • Final 5 920 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90Kr. 11,085Kr. 110,85
100 - 240Kr. 10,422Kr. 104,22
250 - 490Kr. 9,415Kr. 94,15
500 - 990Kr. 8,866Kr. 88,66
1000 +Kr. 8,317Kr. 83,17

*price indicative

Packaging Options:
RS Stock No.:
228-2925
Mfr. Part No.:
SiS590DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212-8 Dual

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.251Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

23.1W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.5nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Combo N- & P-Channel -100 V MOSFET.

100 % Rg and UIS tested

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