Vishay TrenchFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS660CENW-T1_GE3

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Subtotal (1 pack of 10 units)*

Kr.92 21 

(exc. VAT)

Kr.115 26 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90Kr. 9,221Kr. 92,21
100 - 240Kr. 8,74Kr. 87,40
250 - 490Kr. 6,921Kr. 69,21
500 - 990Kr. 5,995Kr. 59,95
1000 +Kr. 4,416Kr. 44,16

*price indicative

Packaging Options:
RS Stock No.:
228-2968
Mfr. Part No.:
SQS660CENW-T1_GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

17.4nC

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

0.8V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET automotive N-channel is 60 V power MOSFET.

100 % Rg and UIS tested

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