Vishay TrenchFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 8-Pin PowerPAK 1212 SQSA70CENW-T1_GE3
- RS Stock No.:
- 228-2972
- Mfr. Part No.:
- SQSA70CENW-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.94 15
(exc. VAT)
Kr.117 69
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 3 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 9,415 | Kr. 94,15 |
| 100 - 240 | Kr. 8,935 | Kr. 89,35 |
| 250 - 490 | Kr. 7,058 | Kr. 70,58 |
| 500 - 990 | Kr. 6,589 | Kr. 65,89 |
| 1000 + | Kr. 5,651 | Kr. 56,51 |
*price indicative
- RS Stock No.:
- 228-2972
- Mfr. Part No.:
- SQSA70CENW-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 68.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Height | 3.3mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 68.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Height 3.3mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 150 V power MOSFET.
100 % Rg and UIS tested
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