Infineon IPD Type N-Channel MOSFET, 50 A, 80 V Enhancement, 3-Pin TO-252 IPD50N08S413ATMA1

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Subtotal (1 pack of 15 units)*

Kr.177 69 

(exc. VAT)

Kr.222 12 

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 60Kr. 11,846Kr. 177,69
75 - 135Kr. 11,257Kr. 168,86
150 - 360Kr. 10,792Kr. 161,88
375 - 735Kr. 10,311Kr. 154,67
750 +Kr. 9,602Kr. 144,03

*price indicative

Packaging Options:
RS Stock No.:
229-1833
Mfr. Part No.:
IPD50N08S413ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

72W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

19nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.5mm

Standards/Approvals

No

Height

2.3mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.

It is RoHS compliant and AEC Q101 qualified

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