onsemi NTMF Type N-Channel MOSFET, 79 A, 120 V P, 8-Pin SO-8 NTMFS008N12MCT1G
- RS Stock No.:
- 229-6467
- Mfr. Part No.:
- NTMFS008N12MCT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.134 42
(exc. VAT)
Kr.168 025
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 22. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 26,884 | Kr. 134,42 |
| 50 - 95 | Kr. 23,178 | Kr. 115,89 |
| 100 - 495 | Kr. 20,088 | Kr. 100,44 |
| 500 - 995 | Kr. 17,664 | Kr. 88,32 |
| 1000 + | Kr. 16,062 | Kr. 80,31 |
*price indicative
- RS Stock No.:
- 229-6467
- Mfr. Part No.:
- NTMFS008N12MCT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | SO-8 | |
| Series | NTMF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 102W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Height | 5.3mm | |
| Length | 6.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type SO-8 | ||
Series NTMF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 102W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Height 5.3mm | ||
Length 6.3mm | ||
Automotive Standard No | ||
The ON Semiconductor N-channel power MOSFET flat lead package designed for compact and efficient designs and including high thermal performance. It is used switching power supplies, power switches, battery management and protection.
Minimize conduction losses
Minimize driver losses
RoHS compliant
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