Infineon OptiMOS 5 Type N-Channel MOSFET, 58 A, 100 V, 8-Pin PQFN ISZ0804NLSATMA1
- RS Stock No.:
- 232-6778
- Mfr. Part No.:
- ISZ0804NLSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.88 37
(exc. VAT)
Kr.110 46
(inc. VAT)
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In Stock
- Plus 4 915 unit(s) shipping from 19. januar 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 17,674 | Kr. 88,37 |
| 50 - 120 | Kr. 15,924 | Kr. 79,62 |
| 125 - 245 | Kr. 14,826 | Kr. 74,13 |
| 250 - 495 | Kr. 13,82 | Kr. 69,10 |
| 500 + | Kr. 12,722 | Kr. 63,61 |
*price indicative
- RS Stock No.:
- 232-6778
- Mfr. Part No.:
- ISZ0804NLSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Width | 1.1 mm | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.5mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Width 1.1 mm | ||
Height 3.4mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Related links
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