STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK

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Subtotal 10 units (supplied on a continuous strip)*

Kr. 914,10

(exc. VAT)

Kr. 1 142,60

(inc. VAT)

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Units
Per unit
10 - 99Kr. 91,41
100 - 999Kr. 84,54
1000 +Kr. 83,51

*price indicative

Packaging Options:
RS Stock No.:
233-3041P
Mfr. Part No.:
STH12N120K5-2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK

Series

STB37N60

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

690mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

44.2nC

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

4.8mm

Standards/Approvals

No

Length

10.4mm

Automotive Standard

No

The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Worldwide best FOM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

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