Infineon ISC Type N-Channel MOSFET, 238 A, 40 V Enhancement, 8-Pin TDSON ISC012N04LM6ATMA1
- RS Stock No.:
- 233-4395
- Mfr. Part No.:
- ISC012N04LM6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.189 47
(exc. VAT)
Kr.236 84
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 950 unit(s) shipping from 30. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 18,947 | Kr. 189,47 |
| 50 - 90 | Kr. 18,007 | Kr. 180,07 |
| 100 - 240 | Kr. 17,24 | Kr. 172,40 |
| 250 - 490 | Kr. 16,485 | Kr. 164,85 |
| 500 + | Kr. 15,341 | Kr. 153,41 |
*price indicative
- RS Stock No.:
- 233-4395
- Mfr. Part No.:
- ISC012N04LM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 238A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Width | 1.2 mm | |
| Height | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 238A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Width 1.2 mm | ||
Height 5.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 6 power MOSFET 40 V family has very low on-resistance RDS(on) and it optimized for synchronous application.
Higher operating temperature rating to 175°C
Superior thermal performance
Related links
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC012N04LM6ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL BSC010N04LSIATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC017N04NM5ATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC019N04NM5ATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC028N04NM5ATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC058N04NM5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC015N04NM5ATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC036N04NM5ATMA1