Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISC011N06LM5ATMA1

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Subtotal (1 pack of 5 units)*

Kr.253 81 

(exc. VAT)

Kr.317 26 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20Kr. 50,762Kr. 253,81
25 - 45Kr. 43,678Kr. 218,39
50 - 120Kr. 41,116Kr. 205,58
125 - 245Kr. 38,05Kr. 190,25
250 +Kr. 35,052Kr. 175,26

*price indicative

Packaging Options:
RS Stock No.:
233-4393
Mfr. Part No.:
ISC011N06LM5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

288A

Maximum Drain Source Voltage Vds

60V

Package Type

TDSON

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

170nC

Maximum Power Dissipation Pd

1.89kW

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

5.35mm

Length

6.1mm

Width

1.2 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFET in the SuperSO8 package extends the OptiMOS 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. It has low reverse recovery charge (Qrr) which improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Higher operating temperature rating to 175°C

Superior thermal performance

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