Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON
- RS Stock No.:
- 233-4392
- Mfr. Part No.:
- ISC011N06LM5ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
Kr.78 525 00
(exc. VAT)
Kr.98 155 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 25. mai 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | Kr. 15,705 | Kr. 78 525,00 |
*price indicative
- RS Stock No.:
- 233-4392
- Mfr. Part No.:
- ISC011N06LM5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 288A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ISC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Power Dissipation Pd | 1.89kW | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.2 mm | |
| Standards/Approvals | No | |
| Height | 5.35mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 288A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ISC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Power Dissipation Pd 1.89kW | ||
Maximum Operating Temperature 175°C | ||
Width 1.2 mm | ||
Standards/Approvals No | ||
Height 5.35mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Infineon MOSFET in the SuperSO8 package extends the OptiMOS 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. It has low reverse recovery charge (Qrr) which improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Higher operating temperature rating to 175°C
Superior thermal performance
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