Infineon BSZ Type N-Channel MOSFET, 40 A, 100 V N, 8-Pin TSDSON-8 FL BSZ0804LSATMA1

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
234-6992
Mfr. Part No.:
BSZ0804LSATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Series

BSZ

Package Type

TSDSON-8 FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.5mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

69W

Maximum Operating Temperature

150°C

Width

6.1 mm

Length

5.35mm

Height

1.2mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS™ PD N-channel power MOSFET targets USB-PD and adapter applications. The product offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction and features quality products in compact, lightweight packages. It has 40A maximum continuous drain current and 100V maximum drain source voltage It is Ideal for high-frequency switching and optimized for chargers.

Logic level availability

Low on-state resistance RDS(on)

Low gate, output and reverse recovery charge

Excellent thermal behaviour

100% avalanche tested

Pb-free lead plating

Halogen-freeaccordingtoIEC61249-2-21

RoHS compliant

Available in 2 small standard packages

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