ROHM Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 R6509END3TL1

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Subtotal (1 pack of 5 units)*

Kr.161 88 

(exc. VAT)

Kr.202 35 

(inc. VAT)

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  • Plus 85 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
5 - 45Kr. 32,376Kr. 161,88
50 - 95Kr. 27,41Kr. 137,05
100 - 245Kr. 23,452Kr. 117,26
250 - 995Kr. 19,494Kr. 97,47
1000 +Kr. 19,036Kr. 95,18

*price indicative

Packaging Options:
RS Stock No.:
235-2690
Mfr. Part No.:
R6509END3TL1
Brand:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

585mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

94W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.4mm

Width

2.4 mm

Standards/Approvals

No

Height

10.4mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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