ROHM Type N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-252 R6511END3TL1

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.167 48 

(exc. VAT)

Kr.209 35 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 09. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45Kr. 33,496Kr. 167,48
50 - 95Kr. 28,714Kr. 143,57
100 - 245Kr. 24,412Kr. 122,06
250 - 995Kr. 23,864Kr. 119,32
1000 +Kr. 19,654Kr. 98,27

*price indicative

Packaging Options:
RS Stock No.:
235-2694
Mfr. Part No.:
R6511END3TL1
Brand:
ROHM
Find similar products by selecting one or more attributes.
Select all

Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

10.4mm

Length

6.4mm

Width

2.4 mm

Standards/Approvals

No

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

Related links