Toshiba Type P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T
- RS Stock No.:
- 236-3569P
- Mfr. Part No.:
- SSM3J338R,LF(T
- Brand:
- Toshiba
Bulk discount available
View bulk pricing optionsSubtotal 100 units (supplied on a continuous strip)*
Kr. 3 002,10
(exc. VAT)
Kr. 3 752,60
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 12 400 unit(s) shipping from 01 June 2026
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Units | Per unit |
|---|---|
| 100 - 200 | Kr. 30,021 |
| 250 - 450 | Kr. 29,378 |
| 500 - 950 | Kr. 28,737 |
| 1000 + | Kr. 26,985 |
*price indicative
- RS Stock No.:
- 236-3569P
- Mfr. Part No.:
- SSM3J338R,LF(T
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26.3mΩ | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Forward Voltage Vf | 0.75V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.4mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26.3mΩ | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Forward Voltage Vf 0.75V | ||
Maximum Operating Temperature 150°C | ||
Length 2.4mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
Related links
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