Vishay Type N-Channel MOSFET, 415 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3

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Subtotal (1 pack of 2 units)*

Kr.37 18 

(exc. VAT)

Kr.46 48 

(inc. VAT)

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2 - 18Kr. 18,59Kr. 37,18
20 - 98Kr. 18,13Kr. 36,26
100 - 198Kr. 17,62Kr. 35,24
200 - 498Kr. 17,16Kr. 34,32
500 +Kr. 16,76Kr. 33,52

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Packaging Options:
RS Stock No.:
239-8615
Mfr. Part No.:
SiDR220EP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

415A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00082Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

120W

Typical Gate Charge Qg @ Vgs

46.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

125°C

Length

6.15mm

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 25 V and 175 °C temperature. This MOSFET used for high power density, synchronous buck converter and load switching.

Top side cooling feature provides additional venue for thermal transfer

Low power loss

UIS tested

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