Vishay Type N-Channel MOSFET, 218 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3

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Subtotal (1 pack of 2 units)*

Kr. 109,82

(exc. VAT)

Kr. 137,28

(inc. VAT)

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Per unit
Per Pack*
2 - 18Kr. 54,91Kr. 109,82
20 - 98Kr. 51,595Kr. 103,19
100 - 198Kr. 46,675Kr. 93,35
200 - 498Kr. 43,985Kr. 87,97
500 +Kr. 41,24Kr. 82,48

*price indicative

Packaging Options:
RS Stock No.:
239-8617
Mfr. Part No.:
SiDR626LEP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

218A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

120W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Operating Temperature

125°C

Standards/Approvals

No

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for solar micro inverter, motor drive switch and synchronous rectification.

Top side cooling feature provides additional venue for thermal transfer

Very low resistance

UIS tested

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