Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN

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Subtotal (1 reel of 5000 units)*

Kr.23 665 00 

(exc. VAT)

Kr.29 580 00 

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +Kr. 4,733Kr. 23 665,00

*price indicative

RS Stock No.:
241-9702
Mfr. Part No.:
BSZ024N04LS6ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Series

BSZ

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS 6 Power transistor is a N channel MOSFET which is optimized for synchronous application. It has Superior thermal resistance.

Halogen-free according to IEC61249-2-21

100% avalanche tested

Qualified according to JEDEC for target applications

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