Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ024N04LS6ATMA1
- RS Stock No.:
- 241-9703
- Mfr. Part No.:
- BSZ024N04LS6ATMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
Kr. 33,75
(exc. VAT)
Kr. 42,19
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 2 000 unit(s) shipping from 22 July 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 16,875 | Kr. 33,75 |
| 20 - 48 | Kr. 13,67 | Kr. 27,34 |
| 50 - 98 | Kr. 12,925 | Kr. 25,85 |
| 100 - 198 | Kr. 12,01 | Kr. 24,02 |
| 200 + | Kr. 10,925 | Kr. 21,85 |
*price indicative
- RS Stock No.:
- 241-9703
- Mfr. Part No.:
- BSZ024N04LS6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ024N04LS6ATMA1
This MOSFET is a silicon-based N-channel switching device designed for high-current power applications in surface-mount assemblies. It operates across an extended temperature range and is intended for use where low conduction losses and robust gate handling are required.
Features and Benefits:
• 0.7mΩ Rds(on) reduces conduction losses for high-efficiency operation
• 212A continuous drain current supports heavy current loads
• 40V drain-source rating enables low-voltage power stages
• 81W power dissipation manages thermal stress during high load
• 80nC typical gate charge balances switching speed and drive effort
• 20V gate-source limit provides defined gate protection margin
• 212A continuous drain current supports heavy current loads
• 40V drain-source rating enables low-voltage power stages
• 81W power dissipation manages thermal stress during high load
• 80nC typical gate charge balances switching speed and drive effort
• 20V gate-source limit provides defined gate protection margin
Applications
• Suitable for motor driver stages requiring high continuous current
• Ideal for DC-DC converter primary or synchronous stages
• Used with power electronics in industrial drive systems
• Can be used for high-current switching in battery management
• Appropriate for surface-mount assemblies needing Compact PQFN packages
• Ideal for DC-DC converter primary or synchronous stages
• Used with power electronics in industrial drive systems
• Can be used for high-current switching in battery management
• Appropriate for surface-mount assemblies needing Compact PQFN packages
What package type is used for thermal and PCB mounting?
It is supplied in a PQFN package optimised for surface mounting and heat transfer.
What environmental temperature range can it withstand during operation?
It functions across temperatures from −55°C up to 175°C for wide-range deployments.
How does the device handle gate drive requirements?
The gate requires drive compatible with an 80nC typical gate charge and must not exceed a 20V Vgs limit.
Is the device compliant with common electronic materials directives?
It conforms to RoHS requirements restricting certain hazardous substances.
How many electrical connections does the package present for PCB layout?
The device is supplied with an 8-pin configuration for routing and thermal land design.
Related links
- Infineon BSZ N-Channel MOSFET 40 V N, 8-Pin PQFN
- Infineon BSZ N-Channel MOSFET 40 V N, 8-Pin PQFN BSZ039N06NSATMA1
- Infineon BSZ N-Channel MOSFET 40 V N, 8-Pin PQFN BSZ018NE2LSIATMA1
- Infineon BSZ N-Channel MOSFET 40 V N, 8-Pin PQFN BSZ018NE2LSATMA1
- Infineon BSZ N-Channel MOSFET 40 V N, 8-Pin PQFN BSZ021N04LS6ATMA1
- Infineon BSZ N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon BSZ N-Channel MOSFET 40 V N, 8-Pin TSDSON-8 FL
- Infineon BSZ N-Channel MOSFET 40 V N, 8-Pin TSDSON-8 FL BSZ010NE2LS5ATMA1