Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ018NE2LSIATMA1

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Subtotal (1 pack of 2 units)*

Kr.33 94 

(exc. VAT)

Kr.42 42 

(inc. VAT)

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Last RS stock
  • Final 5 000 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 8Kr. 16,97Kr. 33,94
10 - 18Kr. 16,015Kr. 32,03
20 - 48Kr. 14,585Kr. 29,17
50 - 98Kr. 12,985Kr. 25,97
100 +Kr. 12,355Kr. 24,71

*price indicative

Packaging Options:
RS Stock No.:
241-9699
Mfr. Part No.:
BSZ018NE2LSIATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Package Type

PQFN

Series

BSZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is a N channel MOSFET which is Optimized for high performance Buck converter. It is 100% avalanche tested.

Monolithic integrated Schottky like diode

Halogen-free according to IEC61249-2-21

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