Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ018NE2LSATMA1

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Subtotal (1 pack of 2 units)*

Kr. 24,48

(exc. VAT)

Kr. 30,60

(inc. VAT)

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Per Pack*
2 - 8Kr. 12,24Kr. 24,48
10 - 18Kr. 11,555Kr. 23,11
20 - 48Kr. 10,525Kr. 21,05
50 - 98Kr. 9,325Kr. 18,65
100 +Kr. 8,925Kr. 17,85

*price indicative

Packaging Options:
RS Stock No.:
241-9697
Mfr. Part No.:
BSZ018NE2LSATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Package Type

PQFN

Series

BSZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is a N channel MOSFET which has Pb-free lead plating. It is optimized for high performance Buck converter.

Very low on-resistance

Qualified according to JEDEC for target applications

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