Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ018NE2LSATMA1

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Subtotal (1 pack of 2 units)*

Kr.29 97 

(exc. VAT)

Kr.37 462 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8Kr. 14,985Kr. 29,97
10 - 18Kr. 14,13Kr. 28,26
20 - 48Kr. 12,925Kr. 25,85
50 - 98Kr. 11,385Kr. 22,77
100 +Kr. 10,925Kr. 21,85

*price indicative

Packaging Options:
RS Stock No.:
241-9697
Mfr. Part No.:
BSZ018NE2LSATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

40V

Series

BSZ

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is a N channel MOSFET which has Pb-free lead plating. It is optimized for high performance Buck converter.

Very low on-resistance

Qualified according to JEDEC for target applications

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