Infineon IPD Type P-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD650P06NMATMA1

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Subtotal (1 pack of 2 units)*

Kr.33 18 

(exc. VAT)

Kr.41 48 

(inc. VAT)

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Per unit
Per Pack*
2 - 18Kr. 16,59Kr. 33,18
20 - 48Kr. 13,955Kr. 27,91
50 - 98Kr. 12,985Kr. 25,97
100 - 198Kr. 12,125Kr. 24,25
200 +Kr. 11,385Kr. 22,77

*price indicative

Packaging Options:
RS Stock No.:
244-0880
Mfr. Part No.:
IPD650P06NMATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.

P-Channel

Very low on-resistance RDS(on)

100% avalanche tested

Normal Level

Enhancement mode

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