Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD95R750P7ATMA1

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Subtotal (1 pack of 2 units)*

Kr.46 90 

(exc. VAT)

Kr.58 62 

(inc. VAT)

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2 - 18Kr. 23,45Kr. 46,90
20 - 48Kr. 19,22Kr. 38,44
50 - 98Kr. 18,075Kr. 36,15
100 - 198Kr. 16,875Kr. 33,75
200 +Kr. 15,445Kr. 30,89

*price indicative

Packaging Options:
RS Stock No.:
244-0883
Mfr. Part No.:
IPD95R750P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) * Eoss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V

Fully optimized portfolio

Integrated Zener Diode ESD protection

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