Infineon IPD Type N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1

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Subtotal (1 pack of 2 units)*

Kr.50 24 

(exc. VAT)

Kr.62 80 

(inc. VAT)

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2 - 18Kr. 25,12Kr. 50,24
20 - 48Kr. 21,095Kr. 42,19
50 - 98Kr. 19,54Kr. 39,08
100 - 198Kr. 18,35Kr. 36,70
200 +Kr. 16,79Kr. 33,58

*price indicative

Packaging Options:
RS Stock No.:
244-8544
Mfr. Part No.:
IPD050N10N5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM5 Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.

N-channel, normal level

Excellent gate charge x RDS(on) product (FOM)

Very low on-resistance RDS(on)

175 °C operating temperature

Ideal for high-frequency switching

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