DiodesZetex DMN Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 10-Pin 4-DSN3015-10 DMN12M8UCA10-7
- RS Stock No.:
- 244-1915
- Mfr. Part No.:
- DMN12M8UCA10-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.150 825
(exc. VAT)
Kr.188 525
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 4 925 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 6,033 | Kr. 150,83 |
| 50 - 475 | Kr. 5,93 | Kr. 148,25 |
| 500 - 975 | Kr. 4,246 | Kr. 106,15 |
| 1000 + | Kr. 4,15 | Kr. 103,75 |
*price indicative
- RS Stock No.:
- 244-1915
- Mfr. Part No.:
- DMN12M8UCA10-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMN | |
| Package Type | 4-DSN3015-10 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 36.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.16mm | |
| Width | 1.54 mm | |
| Standards/Approvals | No | |
| Length | 3.03mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMN | ||
Package Type 4-DSN3015-10 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 36.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Height 0.16mm | ||
Width 1.54 mm | ||
Standards/Approvals No | ||
Length 3.03mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to minimize the on state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications.
ESD protection of gate
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
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