Infineon IMW Type N-Channel MOSFET, 52 A, 75 V P, 3-Pin TO-247

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Subtotal (1 tube of 240 units)*

Kr.10 543 20 

(exc. VAT)

Kr.13 178 40 

(inc. VAT)

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  • Plus 240 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
240 +Kr. 43,93Kr. 10 543,20

*price indicative

RS Stock No.:
244-2922
Mfr. Part No.:
IMW120R090M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

75V

Series

IMW

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

P

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IMW120R090M1HXKSA1 MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Very low switching losses

Threshold-free on state characteristic

Wide gate-source voltage range

Benchmark gate threshold voltage, VGS(th) = 4.5V

0V turn-off gate voltage for easy and simple gate drive

Fully controllable dV/dt

Robust body diode for hard commutation

Temperature independent turn-off switching losses

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