Infineon IMW Type N-Channel MOSFET, 52 A, 75 V N, 3-Pin TO-247 IMW120R020M1HXKSA1

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Kr.252 51 

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Kr.315 64 

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1 - 1Kr. 252,51
2 - 4Kr. 239,90
5 - 9Kr. 229,60
10 - 24Kr. 219,65
25 +Kr. 204,43

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Packaging Options:
RS Stock No.:
248-6669
Mfr. Part No.:
IMW120R020M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

52A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-247

Series

IMW

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon CoolSiC 1200 V, 20 mΩ SiC MOSFET in TO247-3 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.

VDSS - 1200 V at T - 25°C

IDCC - 98 A at T - 25°C

RDS(on) - 19 mohm at VGS - 18 V, T - 25°C

Very low switching losses

Short circuit withstand time 3 microsecond

Benchmark gate threshold voltage, VGS(th) - 4.2 V

Robust against parasitic turn on, 0 V turn-off gate voltage can be applied

Robust body diode for hard commutation

XT interconnection technology for best-in-class thermal performance

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