DiodesZetex 2 Type N-Channel MOSFET, 20 V Enhancement, 6-Pin U-DFN2030 DMN2014LHAB-13

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Subtotal (1 pack of 25 units)*

Kr.46 20 

(exc. VAT)

Kr.57 75 

(inc. VAT)

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25 +Kr. 1,848Kr. 46,20

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Packaging Options:
RS Stock No.:
246-7508
Mfr. Part No.:
DMN2014LHAB-13
Brand:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

20V

Package Type

U-DFN2030

Pin Count

6

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.8W

Maximum Gate Source Voltage Vgs

±12 V

Typical Gate Charge Qg @ Vgs

16nC

Forward Voltage Vf

0.75V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes a new generation dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2030-6 packaging. It offers fast switching and high efficiency. It has working temperature range of -55°C to +150°C. It offers low input capacitance and fast switching speed.

Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±16 V It offers low on-resistance and low gate threshold voltage ESD protected gate

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