DiodesZetex Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-252 DMTH10H015SK3-13

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Subtotal (1 pack of 10 units)*

Kr.140 22 

(exc. VAT)

Kr.175 28 

(inc. VAT)

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Per Pack*
10 - 40Kr. 14,022Kr. 140,22
50 - 90Kr. 13,728Kr. 137,28
100 - 240Kr. 10,857Kr. 108,57
250 - 990Kr. 10,662Kr. 106,62
1000 +Kr. 9,655Kr. 96,55

*price indicative

Packaging Options:
RS Stock No.:
246-7561
Mfr. Part No.:
DMTH10H015SK3-13
Brand:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.014Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.73W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.29mm

Length

6.58mm

Width

6.1 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The DiodesZetex makes an N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO252 packaging. It offers fast switching and high efficiency. It is rated to +175°C and ideal for high ambient temperature environments. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 100 V and maximum gate to source voltage is ±20 V Its low RDS(ON) helps to minimize power losses Its low Qg helps to minimizes switching losses

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