Specifications

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Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	59A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	IRF3710ZS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	18mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	82nC
	Maximum Power Dissipation Pd	160W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	4.83mm
	Length	10.67mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 59A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series IRF3710ZS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 18mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 82nC
	Maximum Power Dissipation Pd 160W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 4.83mm
	Length 10.67mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Infineon IRF3710ZS Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-263

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