Infineon IRF3710ZS Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.6 956 80 

(exc. VAT)

Kr.8 696 00 

(inc. VAT)

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Units
Per unit
Per Reel*
800 +Kr. 8,696Kr. 6 956,80

*price indicative

RS Stock No.:
162-3273
Mfr. Part No.:
IRF3710ZSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Series

IRF3710ZS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

82nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

160W

Maximum Operating Temperature

175°C

Height

4.83mm

Standards/Approvals

No

Length

10.67mm

Width

9.65 mm

Automotive Standard

AEC-Q101

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

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