Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252 IPD122N10N3GATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.28 71 

(exc. VAT)

Kr.35 888 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 1 308 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18Kr. 14,355Kr. 28,71
20 - 48Kr. 12,925Kr. 25,85
50 - 98Kr. 11,955Kr. 23,91
100 - 198Kr. 11,155Kr. 22,31
200 +Kr. 10,355Kr. 20,71

*price indicative

Packaging Options:
RS Stock No.:
258-3833
Mfr. Part No.:
IPD122N10N3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

N

Maximum Power Dissipation Pd

94W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM.

Excellent switching performance

Less paralleling required

Smallest board-space consumption

Easy-to-design products

Related links