STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 248-9687P
- Mfr. Part No.:
- STP60N043DM9
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
Kr. 711,90
(exc. VAT)
Kr. 889,90
(inc. VAT)
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In Stock
- 726 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 - 99 | Kr. 71,19 |
| 100 - 499 | Kr. 70,32 |
| 500 + | Kr. 69,47 |
*price indicative
- RS Stock No.:
- 248-9687P
- Mfr. Part No.:
- STP60N043DM9
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Operating Temperature | 175°C | |
| Length | 28.9mm | |
| Height | 4.6mm | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Operating Temperature 175°C | ||
Length 28.9mm | ||
Height 4.6mm | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The fast recovery diode featuring very low recovery charge, time and RDS on makes this fast switching super junction power MOSFET tailored for the most demanding high efficiency bridge topologies and ZVS phase shift converters.
Fast recovery body diode
Worldwide best RDS on per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested
Extremely dv/dt ruggedness
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