Infineon BSD Type P-Channel MOSFET, 390 mA, -20 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1

RS Stock No.:: 250-0521
Mfr. Part No.:: BSD223PH6327XTSA1
Brand:: Infineon

Infineon BSD Type P-Channel MOSFET, 390 mA, -20 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1

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Subtotal (1 pack of 10 units)*

Kr. 31,35

(exc. VAT)

Kr. 39,19

(inc. VAT)

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In Stock

Plus 1 740 unit(s) shipping from 19 October 2026

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Units	Per unit	Per Pack*
10 - 90	Kr. 3,135	Kr. 31,35
100 - 240	Kr. 2,952	Kr. 29,52
250 - 490	Kr. 1,91	Kr. 19,10
500 - 990	Kr. 1,579	Kr. 15,79
1000 +	Kr. 1,396	Kr. 13,96

*price indicative

RS Stock No.:: 250-0521
Mfr. Part No.:: BSD223PH6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	390mA
	Maximum Drain Source Voltage Vds	-20V
	Package Type	SOT-363
	Series	BSD
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	1.20Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	0.25W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	12V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 390mA
	Maximum Drain Source Voltage Vds -20V
	Package Type SOT-363
	Series BSD
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 1.20Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 0.25W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 12V
	Forward Voltage Vf 1V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - BSD223PH6327XTSA1

Infineon BSD Series MOSFET -20V Drain‑Source Voltage, 0.25W Power Dissipation - BSD223PH6327XTSA1

This p‑channel MOSFET is a surface‑mount transistor designed for low‑power switching across a wide temperature range. It functions as an enhancement‑mode device for controlling current in Compact assemblies and is suitable for environments requiring extended thermal tolerance and automotive‑grade qualification.

Features and Benefits:

• 1.20Ω drain‑source resistance provides predictable conduction behaviour
• 0.39A continuous drain current supports low‑current switching loads
• 12V gate‑source rating allows standard gate‑drive voltages
• -20V drain‑source limit enables operation in negative‑voltage circuits
• 0.25W power dissipation minimises thermal loading in small assemblies

Applications

• Suitable for battery management and low‑current power‑routing tasks
• Ideal for signal switching in Compact surface‑mount electronics
• Used with automotive sensor interfaces requiring temperature endurance
• Can be used for level‑shifting in mixed‑voltage control circuits

What temperature extremes can it handle?

It operates across an ambient range from -55°C to +150°C.

Which package and mounting style does it use?

It is supplied in a SOT‑363 package with a surface‑mount footprint and six pins.

Is it compliant with industry environmental standards?

It meets RoHS requirements and is qualified to AEC‑Q101 for automotive use.

What channel type and mode does it employ?

It is a P‑channel device operating in enhancement mode.