Infineon BSD Type P-Channel MOSFET, -0.39 A, 40 V Enhancement, 6-Pin SOT-363

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Subtotal (1 reel of 3000 units)*

Kr.2 757 00 

(exc. VAT)

Kr.3 447 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000Kr. 0,919Kr. 2 757,00
6000 - 12000Kr. 0,873Kr. 2 619,00
15000 +Kr. 0,836Kr. 2 508,00

*price indicative

RS Stock No.:
250-0520
Mfr. Part No.:
BSD223PH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-0.39A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-363

Series

BSD

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon highly innovative OptiMOS™ families include enhancement mode mosfet with Super logic level. It is avalanche and dv/dt rated. It offers fast switching. The device is Pb-free and Halogen-free. The Vds is -20 V, Rds(on) is 1.2 Ω while the Id is -0.39 A.

Consistently meet the highest quality and performance demands

Great on-state resistance and figure of merit characteristics

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