Infineon BSV Type P-Channel MOSFET, -1.5 A, 40 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1

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Subtotal (1 pack of 10 units)*

Kr.51 25 

(exc. VAT)

Kr.64 06 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 5,125Kr. 51,25
50 - 90Kr. 4,896Kr. 48,96
100 - 240Kr. 4,37Kr. 43,70
250 - 490Kr. 3,958Kr. 39,58
500 +Kr. 3,707Kr. 37,07

*price indicative

Packaging Options:
RS Stock No.:
250-0562
Mfr. Part No.:
BSV236SPH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-1.5A

Maximum Drain Source Voltage Vds

40V

Series

BSV

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P is a Small-Signal-Transistor which is P-channel in Enhancement mode. The Super Logic Level (2.5 V rated). It is Avalanche rated and dv/dt rated.

VDS is 20 V, Rds(on) is 175 mΩ and Id is 1.5 A

150°C operating temperature

Maximum power dissipation is 560mW

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