Infineon BSD Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 6-Pin SOT-363 BSD316SNH6327XTSA1

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Subtotal (1 pack of 10 units)*

Kr.5 42 

(exc. VAT)

Kr.6 78 

(inc. VAT)

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Per Pack*
10 +Kr. 0,542Kr. 5,42

*price indicative

Packaging Options:
RS Stock No.:
258-0699
Mfr. Part No.:
BSD316SNH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.4A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-363

Series

BSD

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.6nC

Maximum Power Dissipation Pd

0.5W

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Length

2mm

Height

0.9mm

Width

1.25 mm

Automotive Standard

AEC-Q101

The Infineon N-channel small signal MOSFET automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated

Low RDS(on) provides higher efficiency and extends battery life

Small packages save PCB space

Best-in-class quality and reliability

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