Vishay Type N-Channel MOSFET, 101 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS141ELNW-T1_GE3
- RS Stock No.:
- 252-0318
- Mfr. Part No.:
- SQS141ELNW-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.103 88
(exc. VAT)
Kr.129 85
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 780 unit(s) shipping from 29. desember 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 10,388 | Kr. 103,88 |
| 100 - 240 | Kr. 9,77 | Kr. 97,70 |
| 250 - 490 | Kr. 8,832 | Kr. 88,32 |
| 500 - 990 | Kr. 8,317 | Kr. 83,17 |
| 1000 + | Kr. 7,802 | Kr. 78,02 |
*price indicative
- RS Stock No.:
- 252-0318
- Mfr. Part No.:
- SQS141ELNW-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | PowerPAK 1212-8SLW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 192W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Width | 3.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type PowerPAK 1212-8SLW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 192W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Width 3.3 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Wettable flank terminals
Low thermal resistance with 0.75 mm profile
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