Vishay Type N-Channel MOSFET, 110 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS142ELNW-T1_GE3

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Subtotal (1 pack of 10 units)*

Kr.80 31 

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Kr.100 39 

(inc. VAT)

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10 - 90Kr. 8,031Kr. 80,31
100 - 490Kr. 7,55Kr. 75,50
500 - 990Kr. 6,818Kr. 68,18
1000 - 2490Kr. 6,429Kr. 64,29
2500 +Kr. 6,029Kr. 60,29

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Packaging Options:
RS Stock No.:
252-0320
Mfr. Part No.:
SQS142ELNW-T1_GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

-40V

Package Type

PowerPAK 1212-8SLW

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

192W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

94nC

Maximum Operating Temperature

175°C

Width

3.3 mm

Standards/Approvals

No

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Wettable flank terminals

Low thermal resistance with 0.75 mm profile


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