Infineon HEXFET Type N-Channel MOSFET, 72 A, 200 V TO-262 IRFS4127TRLPBF

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Subtotal (1 pack of 2 units)*

Kr.75 77 

(exc. VAT)

Kr.94 712 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 37,885Kr. 75,77
20 - 48Kr. 33,69Kr. 67,38
50 - 98Kr. 31,805Kr. 63,61
100 - 198Kr. 29,515Kr. 59,03
200 +Kr. 27,34Kr. 54,68

*price indicative

Packaging Options:
RS Stock No.:
257-5836
Mfr. Part No.:
IRFS4127TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

72A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-262

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

18.6mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

100nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET is improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

High efficiency synchronous rectification in SMPS

Uninterruptible power supply

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