Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN IRFH5215TRPBF

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Subtotal (1 pack of 5 units)*

Kr.105 22 

(exc. VAT)

Kr.131 525 

(inc. VAT)

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5 - 45Kr. 21,044Kr. 105,22
50 - 120Kr. 18,098Kr. 90,49
125 - 245Kr. 17,068Kr. 85,34
250 - 495Kr. 15,788Kr. 78,94
500 +Kr. 14,734Kr. 73,67

*price indicative

Packaging Options:
RS Stock No.:
257-5871
Mfr. Part No.:
IRFH5215TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

58mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

0.9mm

Length

6mm

Width

5 mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Low RDSon (< 58 m)

Low thermal resistance to PCB (<12°C/W)

100% Rg tested

Low profile (<09 mm)

Industry-standard pinout

Compatible with existing surface mount techniques

RoHS compliant containing no lead, no bromide and no halogen environmentally

MSL1, industrial qualification

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