Infineon HEXFET Type N-Channel MOSFET, 120 A, 40 V TO-252 IRFR7446TRPBF
- RS Stock No.:
- 257-5883
- Mfr. Part No.:
- IRFR7446TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.56 91
(exc. VAT)
Kr.71 14
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 11,382 | Kr. 56,91 |
| 50 - 120 | Kr. 10,364 | Kr. 51,82 |
| 125 - 245 | Kr. 9,678 | Kr. 48,39 |
| 250 - 495 | Kr. 8,992 | Kr. 44,96 |
| 500 + | Kr. 8,328 | Kr. 41,64 |
*price indicative
- RS Stock No.:
- 257-5883
- Mfr. Part No.:
- IRFR7446TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 98W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 98W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET improved gate, avalanche and dynamic dV/dt ruggedness and it’s used for OR-ing and redundant power switches and DC/DC and AC/DC converters, DC/AC Inverters.
Fully characterized capacitance and avalanche SOA
Enhanced body diode dv/dt and dI/dt Capability
Lead-Free
Related links
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