Infineon HEXFET Type N-Channel MOSFET, 120 A, 40 V TO-252

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Subtotal (1 reel of 2000 units)*

Kr.7 526 00 

(exc. VAT)

Kr.9 408 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000Kr. 3,763Kr. 7 526,00
4000 +Kr. 3,575Kr. 7 150,00

*price indicative

RS Stock No.:
257-5548
Mfr. Part No.:
IRFR7446TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

3.9mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

98W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET improved gate, avalanche and dynamic dV/dt ruggedness and it’s used for OR-ing and redundant power switches and DC/DC and AC/DC converters, DC/AC Inverters.

Fully characterized capacitance and avalanche SOA

Enhanced body diode dv/dt and dI/dt Capability

Lead-Free

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