Infineon HEXFET Type N-Channel MOSFET, -13 A, -150 V TO-252

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Subtotal (1 reel of 2000 units)*

Kr.11 906 00 

(exc. VAT)

Kr.14 882 00 

(inc. VAT)

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Units
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Per Reel*
2000 - 2000Kr. 5,953Kr. 11 906,00
4000 +Kr. 5,655Kr. 11 310,00

*price indicative

RS Stock No.:
257-9412
Mfr. Part No.:
IRFR6215TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-13A

Maximum Drain Source Voltage Vds

-150V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

580mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

44nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFR series is the -150V single p channel IR mosfet in a D Pak package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount package

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