Infineon HEXFET Type N-Channel MOSFET, 100 A, 40 V, 4-Pin TO-220 IRF1104PBF
- RS Stock No.:
- 257-9270
- Distrelec Article No.:
- 304-40-514
- Mfr. Part No.:
- IRF1104PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.60 57
(exc. VAT)
Kr.75 71
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 840 unit(s) shipping from 21. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 12,114 | Kr. 60,57 |
| 50 - 120 | Kr. 11,256 | Kr. 56,28 |
| 125 - 245 | Kr. 10,524 | Kr. 52,62 |
| 250 - 495 | Kr. 9,792 | Kr. 48,96 |
| 500 + | Kr. 9,084 | Kr. 45,42 |
*price indicative
- RS Stock No.:
- 257-9270
- Distrelec Article No.:
- 304-40-514
- Mfr. Part No.:
- IRF1104PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.009Ω | |
| Maximum Power Dissipation Pd | 170W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.009Ω | ||
Maximum Power Dissipation Pd 170W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel power mosfet in a TO 220 package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
High current rating
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V, 4-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252 AUIRFR8403TRL
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 4-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF
- Infineon HEXFET Type N-Channel MOSFET 20 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 20 V TO-252 IRLR6225TRPBF