Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN

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Subtotal (1 reel of 4000 units)*

Kr.20 176 00 

(exc. VAT)

Kr.25 220 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 5,044Kr. 20 176,00

*price indicative

RS Stock No.:
257-9372
Mfr. Part No.:
IRFH5302TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

29nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

6 mm

Length

5mm

Automotive Standard

No

The Infineon IRFH series is the 30V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Industry standard surface mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Wide portfolio available

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