Infineon HEXFET Type N-Channel MOSFET, 62 A, 200 V TO-263 IRFS4227TRLPBF

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Subtotal (1 pack of 2 units)*

Kr.75 41 

(exc. VAT)

Kr.94 262 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 37,705Kr. 75,41
20 - 48Kr. 33,635Kr. 67,27
50 - 98Kr. 31,29Kr. 62,58
100 - 198Kr. 29,06Kr. 58,12
200 +Kr. 27,225Kr. 54,45

*price indicative

Packaging Options:
RS Stock No.:
257-9431
Mfr. Part No.:
IRFS4227TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

26mΩ

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

330W

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

70nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 200V single n channel HEXFET power mosfet PDP Switch in a D2 Pak package.

Advanced process technology

Key parameters optimized for PDP sustain, energy recovery and pass switch applications

Low E pulse rating to reduce power

Dissipation in PDP sustain, energy recovery and pass switch applications

Low QG for fast response

High repetitive peak current capability for

Reliable operation

Short fall & rise times for fast switching

175°C operating junction temperature for improved ruggedness

Repetitive avalanche capability for robustness and reliability

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