Infineon HEXFET N-Channel MOSFET, 195 A, 60 V TO-263 IRFS7530TRLPBF
- RS Stock No.:
- 257-9438
- Mfr. Part No.:
- IRFS7530TRLPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
Kr. 91,41
(exc. VAT)
Kr. 114,26
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 580 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 45,705 | Kr. 91,41 |
| 20 - 48 | Kr. 40,21 | Kr. 80,42 |
| 50 - 98 | Kr. 38,04 | Kr. 76,08 |
| 100 - 198 | Kr. 35,12 | Kr. 70,24 |
| 200 + | Kr. 32,545 | Kr. 65,09 |
*price indicative
- RS Stock No.:
- 257-9438
- Mfr. Part No.:
- IRFS7530TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 274nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 274nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Industry standard surface mount power package
Capable of being wave soldered
Related links
- Infineon HEXFET N-Channel MOSFET 60 V TO-263 IRFS7530TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V TO-220 IRFB7534PBF
- Infineon HEXFET N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 IRFS4115TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V TO-263 IRFS3306TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V TO-263 IRFS3206TRRPBF
- Infineon HEXFET N-Channel MOSFET 60 V TO-263 IRFS7540TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V TO-263 IRFS3006TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 3-Pin TO-262 IRFSL7437PBF
