Infineon HEXFET Type N-Channel MOSFET, 195 A, 60 V TO-263 IRFS7530TRLPBF

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Subtotal (1 pack of 2 units)*

Kr.85 69 

(exc. VAT)

Kr.107 112 

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 18Kr. 42,845Kr. 85,69
20 - 48Kr. 37,64Kr. 75,28
50 - 98Kr. 35,635Kr. 71,27
100 - 198Kr. 32,945Kr. 65,89
200 +Kr. 30,49Kr. 60,98

*price indicative

Packaging Options:
RS Stock No.:
257-9438
Mfr. Part No.:
IRFS7530TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

HEXFET

Maximum Drain Source Resistance Rds

2mΩ

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

274nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Industry standard surface mount power package

Capable of being wave soldered


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