Infineon HEXFET Type N-Channel MOSFET, 195 A, 150 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.17 496 00 

(exc. VAT)

Kr.21 872 00 

(inc. VAT)

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Units
Per unit
Per Reel*
800 +Kr. 21,87Kr. 17 496,00

*price indicative

RS Stock No.:
165-8288
Mfr. Part No.:
IRFS4115TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

77nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Width

11.3 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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