Infineon BSZ Type N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON BSZ018N04LS6ATMA1
- RS Stock No.:
- 258-0710
- Mfr. Part No.:
- BSZ018N04LS6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.38 77
(exc. VAT)
Kr.48 462
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 780 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 19,385 | Kr. 38,77 |
| 20 - 48 | Kr. 17,33 | Kr. 34,66 |
| 50 - 98 | Kr. 16,075 | Kr. 32,15 |
| 100 - 198 | Kr. 15,10 | Kr. 30,20 |
| 200 + | Kr. 14,015 | Kr. 28,03 |
*price indicative
- RS Stock No.:
- 258-0710
- Mfr. Part No.:
- BSZ018N04LS6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 158A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.78V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 158A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.78V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Highest system efficiency
Less paralleling required
Increased power density
Very low voltage overshoot
Related links
- Infineon N-Channel MOSFET 40 V PG-TSDSON-8 BSZ018N04LS6ATMA1
- Infineon N-Channel MOSFET 30 V PG-TSDSON-8-FL BSZ019N03LSATMA1
- Infineon N-Channel MOSFET 25 V PG-TSDSON-8-FL BSZ036NE2LSATMA1
- Infineon N-Channel MOSFET 60 V PG-TSDSON-8 IPB016N06L3GATMA1
- Infineon N-Channel MOSFET 200 V PG-TSDSON-8 BSZ22DN20NS3GATMA1
- Infineon N-Channel MOSFET 25 V PG-TSDSON-8-U03 BSZ013NE2LS5IATMA1
- Infineon N-Channel MOSFET 100 V PG-TSDSON-8 IPB039N10N3GATMA1
- Infineon N-Channel MOSFET 200 V PG-TSDSON-8 BSZ900N20NS3GATMA1
